PRODUCTS APPLICATIONS TECH SUPPORT QUALITY ABOUT KEC

Discreate Road Map

  • DIODE
  • MOSFET
  • IGBT
2014 2015 2016
1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q
LOW Loss Trench SBD
Trench SBD Charge-Cupling,
Ti-Silicide
60V / 10A ~ 20A, VF : 0.5V
- 100V / 5A ~ 20A, VF : 0.65V
Trench SBD Charge-Cupling,
Ti-Silicide
- 40V, 120V, 150V, 200V
   Low VF, Line-UP
High Temp., Low IR SBD
Charge-Cupling, Pt-Silicide
- 45V ~ 200V Line-Up
   (Automotive, Solar)
Low Loss SBR
Trench SBD Charge-Cupling,
Ti-Silicide
- 25V~100V Low VF Line-Up
   (Short Circuit / Ruggedness)
Low Cap. High ESD TVS
Trench / Discrete Type
Vertical and Double Epi
- 3V, 5V / 0.5pF, 25KV

Trench / Array Package Type
Vertical and Double Epi
- 3V~15V / 0.2pF, 25KV

Nano-Patten, Circuit Type
Vertical & Lateral Type
- 3V~15V / 0.2pF/0.5pF, 30KV
   High Clamping Power
Complex TVS
Low Cap. TVS + PW TVS
Array Package
- 5V/10V~25V
Package TO-277,PDFN56,PDFN33 UDFN2020, UDFN1010, UDFN0402, ULP-4, ULP-5, ULP-10, USCF
Technology 2017 2018 2019
1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q
Trench
MOSFET
MV SGT
N-Ch
CC-MOS
Medium Voltage
Split-Gate
60V~200V/2mΩ~40mΩ
- Low Qg / Low EMI
   (SMPS / Lighting)
Medium Voltage Split-GateⅡ - 40V ~ 200V / 1.6mΩ ~ 100mΩ
- High ESD Built-in Zener(G-G, D-G)
- AEC-Q Quality
   (SMPS-SR / Motor / Automotive)
LV N/P-Ch
MOS
Low Voltage Trench MOS
(NMOS / PMOS)
- 20V ~ 40V / 4.0mΩ ~ 300mΩ
- Logic Drive
- low Qg / Low EMI
- High ESD Built-in Zener(G-G, D-G)
- AEC-Q Quality
LV SGT
N-Ch
CC-MOS
Low voltage Split-Gate - N-ch 100V ~ 250V / 3.5mΩ ~ 300mΩ
- High Cell / Low Qg
   (0.18um Design/Shield gate)
- Logic Drive
- AEC-Q Quality
Low voltage Split-Gate - N-ch 20V ~ 40V / 1.6mΩ ~ 30mΩ
- High Cell/Low Qg
   (0.18um Design/Shield gate)
- Logic Drive
- AEC-Q Quality
High
Voltage
MOSFET
Super -
Junction
Prime FET Version Ⅲ - 600V ~ 800V / 5A ~ 40A
- Planar Gate
- Low EMI, Built-In Zener
- AEC-Q Quality
Prime FET Version Ⅳ - 600V ~ 800V / 2A ~ 100A
- Trench Gate
- Low EMI, Built-In Zener
- AEC-Q Quality
Planar
DMOS
Fresh FET Ⅱ - 600V~800V / 5A~20A
- High Ruggedness
- Built-In Zener /
   Ov, OC, OT Protection
- AEC-Q Quality
Wide Band
SiC
Ultra FET Ⅰ - 1,200V, 1,700V / 30A ~ 100A
- Ultra Low Rds(on)
- High Switching / Recovery
- Hi-Temperature Reliability
- AEC-Q Quality
Package D2PAK-5, D2PAK-7, PDFN33 PDFN56 Dual,
2-PAK Module
Micro-FET, BGA
Technology 2017 2018 2019
1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q
Trench
FS IGBT
650V High Speed HIGBT - 30A~50A / 30kHz~100kHz
- Low Qg / Low switching
   loss
   (Solar, UPS, PFC, Welder)
400V ~ 600V Automotive Ignition - 10A~30A/Clamping Zener
- Smart-Type OV, OC, OT


1200V High Speed HIGBT - 15A~40A / 20kHz~60kHz
- Low Qg / Low switching
   loss
   (Motor, UPS, PFC, Welder)
600V/1200V Module用
IGBT
- 100A~200A/Low VCE(sat)
   (Welder, UPS)
650V / 1200V Module用 IGBT - 100A ~ 400A / Low Qg,
   Low switching loss
   (Motor, Inverter, UPS)
Hybrid
Super-
Junction
IGBT
600V / 650V Ultra Low-
Tail SJ IGBT
- 15A ~ 100A / ~ 150kHz
- Low Qg / Low switching loss
   (Can have competitiveness with
   SiC MOS except thermal
   conductivity and stability)
1200V / 1350V Ultra Low-
Tail SJ IGBT
- 15A ~ 50A / ~ 150kHz
- Low Qg / Low switching loss
   (Can have cost competitiveness
   with SiC)

RC IGBT
1200V / 1350V RC IGBT - 15A ~ 30A / VCE(sat) : 1.8V
- Built in Diode
   (Voltage resonance, IH)
650V RC IGBT - 30A ~ 80A / VCE(sat) : 1.6V
- Built in Diode
   (Current resonance, IH)
600V / 1200V RC IGBT - 5A ~ 50A / VCE(sat) : 1.8V
- Hard Switching
   (Motor, UPS, Welder)
Package TO-247, TO-3P(N)-E, 2-PAK 4-PAK, 6-PAK TO-220IS, D-PAK, D2-PAK