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KMB3D0P30SA : Trench MOSFET, SOT-23, -30V, -3A  

  • SOT-23
  • Click a picture if you want a large image
  • DATASHEET PACKAGE MARKING SPEC PACKING SPEC RECOMMENDED PAD DIMENSION
  • Status

    Active

  • Application

    This Trench MOSFET has better characteristics,
    such as fast switching time, low on resistance,
    low gate charge and excellent avalanche characteristics.
    It is mainly suitable for portable equipment and SMPS.

  • Features
    ▪VDSS(Min.)= -30V, ID= -3A
    ▪Drain-Source ON Resistance :
      RDS(ON)=80mΩ @VGS =-10V
      RDS(ON)=140mΩ @VGS =-4.5V  

     
Max. Rating
Package Package SOT-23
Polarity Polarity P
Drain-Source Voltage VDS (V) -30
Drain Current ID (A) -3
Drain Power Dissipation PD (W) 1.25
Drain-Source ON Resistance (VGS=10V) RDS(ON) (10V) (Ω) 0.08
Drain-Source ON Resistance (VGS=4.5V) RDS(ON) (4.5V) (Ω) 0.14
Drain-Source ON Resistance (VGS=2.5V) RDS(ON) (2.5V) (Ω) -
Gate Charge Qg (nC) 10
Gate Threshold Voltage(Max) Vth(max) (V) -1
Gate Threshold Voltage(Max) Vth(max) (V) -3
Input Capacitance Ciss (pF) 365
ESD DIODE ESD DIODE N
AEC-Q AEC-Q N