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MOSFET

KMD4D2N30S : Trench MOSFET, sot-23, 30V, 4.2A  

  • sot-23
  • Click a picture if you want a large image
  • DATASHEET PACKAGE MARKING SPEC PACKING SPEC RECOMMENDED PAD DIMENSION
  • Status

    New Product

  • Application

    It is mainly suitable for portable equipment.

  • Features
    ·VDSS=30V, ID=4.2A
    ·Drain-Source ON Resistance
     RDS(ON)=42mΩ(Max.) @ VGS=10V
     RDS(ON)=54mΩ(Max.) @ VGS=4.5V
    ·Super High Dense Cell Design
    ·ESD protected

     

Max. Rating
Package Package sot-23
Polarity Polarity N
Drain-Source Voltage VDS (V) 30
Drain Current ID (A) 4.2
Drain Power Dissipation PD (W) 1.25
Drain-Source ON Resistance (VGS=10V) RDS(ON) (10V) (Ω) 0.042
Drain-Source ON Resistance (VGS=4.5V) RDS(ON) (4.5V) (Ω) 0.054
Drain-Source ON Resistance (VGS=2.5V) RDS(ON) (2.5V) (Ω) -
Gate Charge Qg (nC) -
Gate Threshold Voltage(Max) Vth(max) (V) 1.0
Gate Threshold Voltage(Max) Vth(max) (V) 1.8
Input Capacitance Ciss (pF) 310
ESD DIODE ESD DIODE Y
AEC-Q AEC-Q N