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MOSFET

KML0D3P20V : Trench MOSFET, VSM, -20V, -0.3A  

  • VSM
  • Click a picture if you want a large image
  • DATASHEET PACKAGE MARKING SPEC PACKING SPEC RECOMMENDED PAD DIMENSION
  • Status

    Active

  • Application

    General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.

  • Features

    ·VDSS=-20V, ID=-0.3A
    ·Drain-Soure ON Resistance
    : RDS(ON)=1.2Ω @ VGS=-4.5V
    : RDS(ON)=1.6Ω @ VGS=-2.5V
    : RDS(ON)=2.7Ω @ VGS=-1.8V

Max. Rating
Package Package VSM
Polarity Polarity P
Drain-Source Voltage VDS (V) -20
Drain Current ID (A) -0.3
Drain Power Dissipation PD (W) 0.15
Drain-Source ON Resistance (VGS=10V) RDS(ON) (10V) (Ω) -
Drain-Source ON Resistance (VGS=4.5V) RDS(ON) (4.5V) (Ω) 1.2
Drain-Source ON Resistance (VGS=2.5V) RDS(ON) (2.5V) (Ω) 1.6
Gate Charge Qg (nC) 1.5
Gate Threshold Voltage(Max) Vth(max) (V) -0.45
Gate Threshold Voltage(Max) Vth(max) (V) -1
Input Capacitance Ciss (pF) 55
ESD DIODE ESD DIODE Y
AEC-Q AEC-Q N