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MOSFET

KML0D4N20V : Trench MOSFET, VSM, 20V, 0.4A  

  • VSM
  • Click a picture if you want a large image
  • DATASHEET PACKAGE MARKING SPEC PACKING SPEC RECOMMENDED PAD DIMENSION
  • Status

    Active

  • Application

  • Features

    ·VDSS=20V, ID=0.4A
    ·Drain-Soure ON Resistance
    : RDS(ON)=0.70Ω @ VGS=4.5V
    : RDS(ON)=0.85Ω @ VGS=2.5V
    : RDS(ON)=1.25Ω @ VGS=1.8V
    ·Super High Dense Cell Design

Max. Rating
Package Package VSM
Polarity Polarity N
Drain-Source Voltage VDS (V) 20
Drain Current ID (A) 0.4
Drain Power Dissipation PD (W) 0.15
Drain-Source ON Resistance (VGS=10V) RDS(ON) (10V) (Ω) -
Drain-Source ON Resistance (VGS=4.5V) RDS(ON) (4.5V) (Ω) 0.7
Drain-Source ON Resistance (VGS=2.5V) RDS(ON) (2.5V) (Ω) 0.85
Gate Charge Qg (nC) 0.75
Gate Threshold Voltage(Max) Vth(max) (V) 0.45
Gate Threshold Voltage(Max) Vth(max) (V) 1
Input Capacitance Ciss (pF) 43
ESD DIODE ESD DIODE Y
AEC-Q AEC-Q Y