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Marking Specification


IGBT
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KGF15N120NRH : IGBT, TO-3P(N)-E,1200V, 15A  

  • TO-3P(N)-E
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  • DATASHEET PACKAGE
  • Status

    Not recommend for new design

  • Application

    ·Induction heating ·Microwave ovens ·Soft switching applications

  • Features ·High speed switching
    ·Soft current turn-off waveform
    ·Low saturation voltage : VCE(sat) = 1.7V (@IC=15A)
    ·Low EMI
Max. Rating
Package Package TO-3P(N)-E
Collector-Emitter Voltage VCES (V) 1200
Gate-Emitter Voltage VGES (V) ±20
Collector Current IC (A) @25 30
Collector Current IC (A) @100 15
Pulsed Collector Current ICM (A) 45
Diode Continuous Forward Current IF (A) 15
Maximun Power Dissipation PD (W) @25 142
Maximun Junction Temperature TJ(℃) 150
Gate Threshold Voltage VGE(th) (min) (V) 5
Gate Threshold Voltage VGE(th)(max)(V) 7.2
Collector-Emitter Saturation Voltage VCE(sat)(V) 1.7
Anti-Paralle Built In Diode Built in Diode YES
AEC-Q AEC-Q N