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KGT12N120NDH : IGBT, TO-3P(N)-E,1200V, 12A  

  • TO-3P(N)-E
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  • DATASHEET PACKAGE
  • Status

    Not recommend for new design

  • Application

    KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc.

  • Features ·High speed switching
    ·High system efficiency
    ·Soft current turn-off waveforms
    ·Extremely enhanced avalanche capability
Max. Rating
Package Package TO-3P(N)-E
Collector-Emitter Voltage VCES (V) 1200
Gate-Emitter Voltage VGES (V) ±20
Collector Current IC (A) @25 24
Collector Current IC (A) @100 12
Pulsed Collector Current ICM (A) 36
Diode Continuous Forward Current IF (A) 15
Maximun Power Dissipation PD (W) @25 176
Maximun Junction Temperature TJ(℃) 150
Gate Threshold Voltage VGE(th) (min) (V) 4.5
Gate Threshold Voltage VGE(th)(max)(V) 7.5
Collector-Emitter Saturation Voltage VCE(sat)(V) 2.0
Anti-Paralle Built In Diode Built in Diode YES
AEC-Q AEC-Q N