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IGBT

KGT15N120NDS : IGBT, TO-3P(N)-E,1200V, 15A  

  • TO-3P(N)-E
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  • DATASHEET PACKAGE
  • Status

    Not recommend for new design

  • Application

    General Description

  • Features ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·Extremely enhanced avalanche capability
Max. Rating
Package Package TO-3P(N)-E
Collector-Emitter Voltage VCES (V) 1200
Gate-Emitter Voltage VGES (V) ±20
Collector Current IC (A) @25 30
Collector Current IC (A) @100 15
Pulsed Collector Current ICM (A) 45
Diode Continuous Forward Current IF (A) 15
Maximun Power Dissipation PD (W) @25 176
Maximun Junction Temperature TJ(℃) 150
Gate Threshold Voltage VGE(th) (min) (V) 4.5
Gate Threshold Voltage VGE(th)(max)(V) 7.5
Collector-Emitter Saturation Voltage VCE(sat)(V) 1.98
Anti-Paralle Built In Diode Built in Diode YES
AEC-Q AEC-Q N