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Low Voltage MOSFET

Low Voltage MOSFET products are offered in the general Trench Process and Split Gate Trench Process. Split Gate Trench MOSFET offers low Qg, Low RDS(on), and fast switching, with strengths in high ruggedness. Such characteristics allow for miniaturization and low loss designs, as well as stable designs of systems. Various product lineups are offered through low voltage of under 200V and different PDFN type Power SMD packages, available for use in various power supplies and motors.

Parametric Finder

Product	Status	AEC-Q	Package	Polarity	BV_DSS [V]	I_D [A]	P_D [W]	R_DS(ON) @10V[Ω]	R_DS(ON) @4.5V[Ω]	R_DS(ON) @2.5V[Ω]	Qg [nC]	V_th_Min[V]	V_th_MAX[V]	Ciss[pF]	ESD DIODE
KU016N06CS1	NEW	N	PDFN56(1)	N	60	234	167	0.0016			96	2.1	3.3	6223	N
KU3600N10SZA	Active	N	SOT-23	N	100	1.3	1.25	0.36			3.3	1	2.5	147	Y
KU080P03C	Active	N	PDFN56	P	-30	-70	80	0.008	0.01		42	-1	-2	4810	N
KU2307D	Active	N	DPAK(1)/ DPAK(3)	N	30	79	57	0.0054	0.0101		24.6	1	3	1313
KU2303D	Active	N	DPAK(1)/ DPAK(3)	N	30	62	52	0.0078	0.0142		18.4	1	3	937
KU310N10F	Active	N	TO-220IS(1)	N	100	23	38	0.031			49	2	4	2230	N
KUS045N10FA	Active	N	TO-220IS(1)	N	100	80	50	0.0045			78	2	4	5320	N
KUS086N10DA	Active	N	DPAK(1)/ DPAK(3)	N	100	63	62.5	0.0086			54	2	4	3440	N
KUS086N10FA	Active	N	TO-220IS(1)	N	100	55	46	0.0086			54	2	4	3440	N
KUS220N10DA	Active	N	DPAK(1)/ DPAK(3)	N	100	32	39	0.022			18	2	4	1170	N
KU024N03C	Active	N	PDFN56	N	30	100	40	0.0024			74	1.2	2.5	4000	N
KU6KDN10MZ	Active	N	DFN22D	N	100	0.22	0.69	6	10		0.65	1	2.5	20	Y
KMD4D2N30S	Active	N	SOT-23	N	30	4.2	1.25	0.042	0.054			1	1.8	310	Y
KML0D4N20V	Active	Y	VSM	N	20	0.4	0.15		0.7	0.85	0.75	0.45	1	43	Y
KML0D4N20E	Active	N	ESM	N	20	0.4	0.21		0.7	0.85	0.555	0.45	1	43	Y
KML0D4N20UL	Active	N	ULP-3/ ULP-3(1)	N	20	0.4	0.284		0.7	0.85	0.75	0.45	1	43	Y

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